FDS8958 Datasheet, MOSFET, Fairchild Semiconductor

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FDS8958 Features and benefits

* Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
* Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switc.

FDS8958 Application

where low in-line power loss and fast switching are required.
*
* Features
* Q1: N-Channel RDS(on) = 0.028Ω.

FDS8958 Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switchin.

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